{"title":"毫米波频率下200GHz fT SiGe HBT负载拉特性","authors":"L. Boglione, R. T. Webster","doi":"10.1109/RFIC.2010.5477275","DOIUrl":null,"url":null,"abstract":"The load pull measurement of a commercially available SiGe HBT device has been performed at Q band over frequency and bias. Measured mm-wave results for the SiGe process under test have never been made available to the general public before and no comparable information on similar SiGe devices is available in the public domain. The goal of this paper is to begin to fill this gap: load pull results along with a discussion of the characterization setup and procedure are presented.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"601 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"200GHz fT SiGe HBT load pull characterization at mm-wave frequencies\",\"authors\":\"L. Boglione, R. T. Webster\",\"doi\":\"10.1109/RFIC.2010.5477275\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The load pull measurement of a commercially available SiGe HBT device has been performed at Q band over frequency and bias. Measured mm-wave results for the SiGe process under test have never been made available to the general public before and no comparable information on similar SiGe devices is available in the public domain. The goal of this paper is to begin to fill this gap: load pull results along with a discussion of the characterization setup and procedure are presented.\",\"PeriodicalId\":269027,\"journal\":{\"name\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"601 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2010.5477275\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477275","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
200GHz fT SiGe HBT load pull characterization at mm-wave frequencies
The load pull measurement of a commercially available SiGe HBT device has been performed at Q band over frequency and bias. Measured mm-wave results for the SiGe process under test have never been made available to the general public before and no comparable information on similar SiGe devices is available in the public domain. The goal of this paper is to begin to fill this gap: load pull results along with a discussion of the characterization setup and procedure are presented.
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