{"title":"实现110GHz带宽和17.5dBm峰值输出功率的级尺分布式功率放大器","authors":"Jiashu Chen, A. Niknejad","doi":"10.1109/RFIC.2010.5477261","DOIUrl":null,"url":null,"abstract":"This paper presents the design of a pseudo-differential distributed power amplifier in a 0.13µm SiGe BiCMOS process. Based on the newly proposed efficiency enhancing stage-scaling technique, the distributed power amplifier achieves a small-signal bandwidth of 110GHz, a peak saturated output power of 17.5dBm and a peak PAE of 13.2%. The measured 3dB output power bandwidth is greater than 77GHz. The amplifier consumes 119mA from a 3V supply.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A stage-scaled distributed power amplifier achieving 110GHz bandwidth and 17.5dBm peak output power\",\"authors\":\"Jiashu Chen, A. Niknejad\",\"doi\":\"10.1109/RFIC.2010.5477261\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of a pseudo-differential distributed power amplifier in a 0.13µm SiGe BiCMOS process. Based on the newly proposed efficiency enhancing stage-scaling technique, the distributed power amplifier achieves a small-signal bandwidth of 110GHz, a peak saturated output power of 17.5dBm and a peak PAE of 13.2%. The measured 3dB output power bandwidth is greater than 77GHz. The amplifier consumes 119mA from a 3V supply.\",\"PeriodicalId\":269027,\"journal\":{\"name\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2010.5477261\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477261","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A stage-scaled distributed power amplifier achieving 110GHz bandwidth and 17.5dBm peak output power
This paper presents the design of a pseudo-differential distributed power amplifier in a 0.13µm SiGe BiCMOS process. Based on the newly proposed efficiency enhancing stage-scaling technique, the distributed power amplifier achieves a small-signal bandwidth of 110GHz, a peak saturated output power of 17.5dBm and a peak PAE of 13.2%. The measured 3dB output power bandwidth is greater than 77GHz. The amplifier consumes 119mA from a 3V supply.