一种5- 10ghz倍频AlGaAs/GaAs HBT下变频MMIC

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.529005

K. Kobayashi, R. Kasody, A. Oki

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引用次数: 1

摘要

本工作描述了一种x波段HBT下变频MMIC，该MMIC集成了双双平衡肖特基混频器和5级HBT放大，可实现>30 dB转换增益和高达15 dBm的IP3, RF带宽为5-10 GHz。一种新型的HBT放大器增益单元采用有源反馈，在紧凑的区域内提供宽带宽和高性能，用于RF、LO和IF放大器级。MMIC以3.6倍/3.4 mm/sup /面积实现，功耗为530 mW，通过6v电源实现自偏置。该MMIC代表了基于GaAs HBT和肖特基技术的最高复杂性x波段下变频MMIC演示。

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A 5-10 GHz octave-band AlGaAs/GaAs HBT down-converter MMIC

This work describes an X-band HBT down-converter MMIC which integrates a double double-balanced Schottky mixer and 5 stages of HBT amplification to achieve >30 dB conversion gain and an IP3 as high as 15 dBm with an RF bandwidth from 5-10 GHz. A novel HBT amplifier gain cell employing active feedback which provides wide bandwidth and high performance in a compact area is used for the RF, LO, and IF amplifier stages. The MMIC is realized in a 3.6/spl times/3.4 mm/sup 2/ area, consumes 530 mW, and is self-biased through a 6 V supply. This MMIC represents the highest complexity X-band down-converter MMIC demonstration based on GaAs HBT and Schottky technology.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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