纳米结构非晶碳膜的制备及其场致发射性能

Xinyue Zhang, Zhanling Lu, Binglin Zhang, N. Yao, Bingxian Ma, Yongmei Zhao
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引用次数: 2

摘要

采用微波等离子体化学气相沉积(MPCVD)技术,在n-Si(111)衬底上制备了纳米结构的非晶碳膜。气源为H/sub - 2/和CH/sub - 4/混合物,流量分别为100 sccm和16 sccm。沉积过程中,总压力为6.0 KPa,衬底温度为830/spl℃,微波功率为1700W,保持4小时。采用场发射扫描电镜(SEM)、x射线衍射仪(XRD)、拉曼散射光谱和x射线光电子能谱(XPS)对膜的表面形貌和纳米结构进行了表征。结果表明:该薄膜由粒径不超过100 nm的碳组成,主要成分为sp/sup 2/和sp/sup 3/键混合的非晶碳;然后在低于5/spl倍/10/sup -5/Pa的真空下测量沉积膜的场发射。结果表明,初始导通电场很小,约为0.6 V//spl mu/m;在3.7 V//spl mu/m的电场下,获得了2.5mA/cm/sup 2/的电流密度。在3.7V//spl mu/m电场下,发射位点密度大于10个/sup 4//cm/sup 2/。这些特性表明这种沉积的纳米结构非晶碳膜是一种高效的冷阴极材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparation of nano-structure amorphous carbon film and its field emission properties
Nano-structure amorphous carbons films were fabricated on n-Si(111) substrates coated with titanium by microwave plasma chemical vapor deposition (MPCVD) system. The source gas was a mixture of H/sub 2/ and CH/sub 4/ with the flow rates of 100 sccm and 16 sccm, respectively. During the deposition, the total pressure of 6.0 KPa, substrates temperature of 830/spl deg/C and microwave power of 1700W which were kept for 4 hours. The surface morphology and the nano-structure of the films were tested by field emission scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman scattering spectroscopy and X-ray photoelectron spectroscopy (XPS). The results show that the film consists of carbon grain size of no more than 100 nm and the main component was amorphous carbon with the mixture of sp/sup 2/ and sp/sup 3/ bond. Field emission of as-deposited film was then measured at a vacuum of below 5/spl times/10/sup -5/Pa. It was found that the initial turn-on field was very low, which was about 0.6 V//spl mu/m; the current density of 2.5mA/cm/sup 2/ was obtained under an electric field of 3.7 V//spl mu/m. The emission sites density was estimated to be more than 10/sup 4//cm/sup 2/ at electric field of 3.7V//spl mu/m. All these characteristics indicate that such deposited nano-structure amorphous carbon film is an efficient cold cathode material.
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