用于高精度CMOS模拟设计的兼容侧双极晶体管的性能提升

ESSCIRC '88: Fourteenth European Solid-State Circuits Conference Pub Date : 1988-09-01 DOI:10.1109/ESSCIRC.1988.5468282

X. Arreguit, E. Vittoz

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引用次数: 4

摘要

建立了兼容侧双极晶体管的残余栅极效应对侧集电极电流的影响模型，提出了一种新的栅极偏置方法。结果表明，该效应可用于补偿晶体管失配，从而在100°K的温度范围内将模拟CMOS电路的精度提高5-10倍。

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Performance Enhancement of Compatible Lateral Bipolar Transistors for High-Precision CMOS Analog Design

The residual gate effect on the lateral collector current of compatible lateral bipolar transistors is modelled and a novel method for biasing the gate is presented. It is shown that this effect can be used to compensate transistors mismatch in order to enhance the precision of analog CMOS circuits by a factor of 5-10 over a temperature range of 100°K.

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ESSCIRC '88: Fourteenth European Solid-State Circuits Conference

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