鞍鳍型DRAM单元晶体管GIDL电流中三电平随机电报噪声的观察

2010 IEEE International Memory Workshop Pub Date : 2010-05-16 DOI:10.1109/IMW.2010.5488406

Byoungchan Oh, Heung-Jae Cho, Heesang Kim, Hyungcheol Shin

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引用次数: 1

摘要

在DRAM单元晶体管的GIDL电流中测量了多电平rtn。在GIDL电流中观察到未见报道的三电平RTN。我们发现该RTN具有独特的特征，可以区别于单圈闭的二能级RTN和双圈闭的四能级RTN。此外，我们还讨论了三能级RTN时间常数的偏置依赖性。

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Observation of three-level random telegraph noise in GIDL current of Saddle-Fin type DRAM cell transistor

Multi level RTNs have been measured in GIDL current of DRAM cell transistor. Three-level RTN which has not been reported in GIDL current was observed. We found that this RTN has unique characteristics which could be distinguished from two-level RTN by single trap and four-level RTN due to two traps. Also, we discussed bias dependency of time constants of the three-level RTN.

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2010 IEEE International Memory Workshop

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