双栅隧穿场效应管中随机掺杂波动影响的数值研究

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628040

Ying Zhu, Ye Yun, Yu Cao, Jin He, Aixi Zhang, Hongyu He, Hao Wang, Chenyue Ma, Yue Hu, M. Chan, Xiaoan Zhu

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引用次数: 7

摘要

利用三维器件模拟研究了随机掺杂波动对优化后的双栅隧穿场效应管性能的影响。本文探讨了具有高k栅极介质的TFET性能对RDF的敏感性。Sano的方法被用于生成随机兴奋剂配置文件，用于统计设备模拟。研究发现，由于RDF, TFET的电参数(例如Vth, gm和SS)会发生剧烈的位移和波动，从而对电路性能产生进一步的影响。

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Numerical study on effects of random dopant fluctuation in double gate tunneling FET

Impacts of random dopant fluctuations (RDFs) on the performance of an optimized double-gate (DG) tunneling FET (TFET) are studied using 3-D device simulations. The sensitivity of the TFET performance with a high-k gate dielectric to RDF is explored in this paper. Sano's approach is used to generate random doping profiles for statistical device simulation. It is found that TFET suffers from dramatic shift and fluctuations in electrical parameters (Vth, gm and SS for instance) due to RDF, thus emerging a further impact on circuit performance.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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