半导体器件太赫兹辐射的增强

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237246

A. Dowd, M. Johnston, D. Whittaker, A. Davies, E. Linfield

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引用次数: 0

摘要

我们研究了从半导体表面发射的相干太赫兹(THz)频率电磁脉冲。从表面场发射体中观测到太赫兹辐射的准直光束，这些发射体的效率通过(a)修改发射体表面的有效折射率和(b)相对于表面重新定向太赫兹偶极子而得到改善。在GaAs/InAs棱镜发射器中，发射的太赫兹功率增加了1 /spl / sim/ 20/spl倍。

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Enhancement of THz emission from semiconductor devices

We have studied the emission of coherent terahertz (THz) frequency electromagnetic pulses from semiconductor surfaces. Collimated beams of THz radiation are observed from surface-field emitters and the efficiency of these emitters is shown to be improved by (a) modifying the effective refractive index at the surface of the emitter and (b) reorienting the THz dipole with respect to the surface. A /spl sim/ 20/spl times/ enhancement in emitted THz power was seen in a GaAs/InAs prism emitter.

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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