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一个35ns 16K PROM

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1980.1156026
R. Wallace, A. Learn, K. Schuette
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引用次数: 6

摘要

本文将介绍一个16384 b的2K × 8的PROM，在140mil平方的芯片上制造，典型的25ns访问时间和600mW功耗。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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A 35ns 16K PROM
This paper will cover a 16,384b PROM organized 2K × 8, fabricated on a 140mil square chip, with a typical 25ns access time and 600mW power dissipation.
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1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
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