{"title":"一个0.72 nW, 1个样品/s全集成pH传感器，65.8 LSB/pH灵敏度","authors":"Yihan Zhang, F. Cardoso, K. Shepard","doi":"10.1109/vlsicircuits18222.2020.9163023","DOIUrl":null,"url":null,"abstract":"This paper presents a 0.85 mm2 fully integrated pH sensor IC utilizing an ion sensitive field effect transistor (ISFET) and reference field effect transistor (REFET) pair in which the native foundry passivation layer is used as an ion sensitive layer. The pH sensor has 10 bit resolution with 65.8 LSB/pH sensitivity, while consuming only 0.72 nW at 1 sample/s, improving an overall figure of merit (FoM) that accounts for power, sampling frequency, and sensitivity by > 4000×.","PeriodicalId":252787,"journal":{"name":"2020 IEEE Symposium on VLSI Circuits","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 0.72 nW, 1 Sample/s Fully Integrated pH Sensor with 65.8 LSB/pH Sensitivity\",\"authors\":\"Yihan Zhang, F. Cardoso, K. Shepard\",\"doi\":\"10.1109/vlsicircuits18222.2020.9163023\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 0.85 mm2 fully integrated pH sensor IC utilizing an ion sensitive field effect transistor (ISFET) and reference field effect transistor (REFET) pair in which the native foundry passivation layer is used as an ion sensitive layer. The pH sensor has 10 bit resolution with 65.8 LSB/pH sensitivity, while consuming only 0.72 nW at 1 sample/s, improving an overall figure of merit (FoM) that accounts for power, sampling frequency, and sensitivity by > 4000×.\",\"PeriodicalId\":252787,\"journal\":{\"name\":\"2020 IEEE Symposium on VLSI Circuits\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsicircuits18222.2020.9163023\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsicircuits18222.2020.9163023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.72 nW, 1 Sample/s Fully Integrated pH Sensor with 65.8 LSB/pH Sensitivity
This paper presents a 0.85 mm2 fully integrated pH sensor IC utilizing an ion sensitive field effect transistor (ISFET) and reference field effect transistor (REFET) pair in which the native foundry passivation layer is used as an ion sensitive layer. The pH sensor has 10 bit resolution with 65.8 LSB/pH sensitivity, while consuming only 0.72 nW at 1 sample/s, improving an overall figure of merit (FoM) that accounts for power, sampling frequency, and sensitivity by > 4000×.
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