{"title":"一种基于有源电感的CMOS射频带通滤波器","authors":"Zhiqiang Gao, Jianguo Ma, Mingyan Yu, Y. Ye","doi":"10.1109/ICASIC.2005.1611401","DOIUrl":null,"url":null,"abstract":"This paper presents a 6th order RF bandpass filter using low-voltage based on active inductor. In the filter, a design technique for a high-Q CMOS active inductor operating in the RF-band is described. Simulated performance presented is shown that the center frequency of filter using a 0.25-mum CMOS process can be operated at the 2.05-2.45 GHz frequency band under a 1.8V power supply and suitable for multiband wireless applications and RF system on-chip","PeriodicalId":431034,"journal":{"name":"2005 6th International Conference on ASIC","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A CMOS RF bandpass filter based on the active inductor\",\"authors\":\"Zhiqiang Gao, Jianguo Ma, Mingyan Yu, Y. Ye\",\"doi\":\"10.1109/ICASIC.2005.1611401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 6th order RF bandpass filter using low-voltage based on active inductor. In the filter, a design technique for a high-Q CMOS active inductor operating in the RF-band is described. Simulated performance presented is shown that the center frequency of filter using a 0.25-mum CMOS process can be operated at the 2.05-2.45 GHz frequency band under a 1.8V power supply and suitable for multiband wireless applications and RF system on-chip\",\"PeriodicalId\":431034,\"journal\":{\"name\":\"2005 6th International Conference on ASIC\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 6th International Conference on ASIC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICASIC.2005.1611401\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 6th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASIC.2005.1611401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
摘要
提出了一种基于有源电感的低压六阶射频带通滤波器。在滤波器中,描述了工作在射频波段的高q CMOS有源电感的设计技术。仿真结果表明,在1.8V电源下,采用0.25 μ m CMOS工艺的滤波器中心频率可工作在2.05 ~ 2.45 GHz频段,适用于多频段无线应用和片上射频系统
A CMOS RF bandpass filter based on the active inductor
This paper presents a 6th order RF bandpass filter using low-voltage based on active inductor. In the filter, a design technique for a high-Q CMOS active inductor operating in the RF-band is described. Simulated performance presented is shown that the center frequency of filter using a 0.25-mum CMOS process can be operated at the 2.05-2.45 GHz frequency band under a 1.8V power supply and suitable for multiband wireless applications and RF system on-chip