{"title":"0.8 μ m BiCMOS vlsi的聚硅界面氧化物起球机理及其控制","authors":"T. Maeda, M. Higashizono, H. Momose, J. Matsunaga","doi":"10.1109/BIPOL.1989.69468","DOIUrl":null,"url":null,"abstract":"Three samples with different thicknesses of polysilicon-silicon interfacial oxide were prepared. The influence of the interfacial oxide on the electrical characteristics of 0.8- mu m BiCMOS VLSIs was studied. From the results, the maximum interfacial oxide thickness allowed for BiCMOS LSIs was determined. To control the interfacial oxide thickness, the ball-up mechanism was studied using HRXTEM combined with energy-dispersive X-ray spectroscopy measurements. The optimum heat treatment after emitter deposition to realize 0.5- mu m BiCMOS VLSI was also determined.<<ETX>>","PeriodicalId":189201,"journal":{"name":"Proceedings of the Bipolar Circuits and Technology Meeting","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Poly Si-Si interfacial oxide ball-up mechanism and its control for 0.8 mu m BiCMOS VLSIs\",\"authors\":\"T. Maeda, M. Higashizono, H. Momose, J. Matsunaga\",\"doi\":\"10.1109/BIPOL.1989.69468\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three samples with different thicknesses of polysilicon-silicon interfacial oxide were prepared. The influence of the interfacial oxide on the electrical characteristics of 0.8- mu m BiCMOS VLSIs was studied. From the results, the maximum interfacial oxide thickness allowed for BiCMOS LSIs was determined. To control the interfacial oxide thickness, the ball-up mechanism was studied using HRXTEM combined with energy-dispersive X-ray spectroscopy measurements. The optimum heat treatment after emitter deposition to realize 0.5- mu m BiCMOS VLSI was also determined.<<ETX>>\",\"PeriodicalId\":189201,\"journal\":{\"name\":\"Proceedings of the Bipolar Circuits and Technology Meeting\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Bipolar Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1989.69468\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Bipolar Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1989.69468","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
摘要
制备了三种不同厚度的多晶硅-硅界面氧化物样品。研究了界面氧化物对0.8 μ m BiCMOS vlsi电学特性的影响。根据结果，确定了BiCMOS lsi允许的最大界面氧化物厚度。为了控制界面氧化层厚度，采用HRXTEM结合能量色散x射线能谱测量研究了成球机理。并确定了实现0.5 μ m BiCMOS VLSI的发射极沉积后的最佳热处理工艺。
Poly Si-Si interfacial oxide ball-up mechanism and its control for 0.8 mu m BiCMOS VLSIs
Three samples with different thicknesses of polysilicon-silicon interfacial oxide were prepared. The influence of the interfacial oxide on the electrical characteristics of 0.8- mu m BiCMOS VLSIs was studied. From the results, the maximum interfacial oxide thickness allowed for BiCMOS LSIs was determined. To control the interfacial oxide thickness, the ball-up mechanism was studied using HRXTEM combined with energy-dispersive X-ray spectroscopy measurements. The optimum heat treatment after emitter deposition to realize 0.5- mu m BiCMOS VLSI was also determined.<>
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