忆阻器实现的材料蕴涵门的逻辑综合与广义符号

Anika Raghuvanshi, M. Perkowski
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引用次数: 39

摘要

提出了基于忆阻器的材料隐含门的单输出不完全多电平二进制电路的逻辑合成新方法。第一种方法遵循Lehtonen的假设,即只使用两个工作的忆阻器。该算法最小化隐含门(IMPLY)的数量,这对应于最小化脉冲数或延迟时间。该贪心搜索方法利用本质素数和次级本质素数,不需要解决覆盖问题,速度快,结果质量高。我们将其与其他合成方法进行了比较,如改进的SOP和具有最小工作忆阻器数量的异或产品和(ESOP)。我们分析了通过增加更多的工作忆阻器来减少隐式门计数的问题,并引入了隐式序列图,一种类似于可逆逻辑中使用的新符号。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Logic synthesis and a generalized notation for memristor-realized material implication gates
The paper presents new logic synthesis methods for single-output incomplete multi-level binary circuits using Memristor-based material implication gates. The first method follows Lehtonen's assumption of using only two working memristors. The algorithm minimizes the number of implication (IMPLY) gates, which corresponds to minimizing the number of pulses or the delay time. This greedy search method uses essential and secondary essential primes, does not require solving the covering problem, is fast, and produces high quality results. We compare it to other synthesis methods, such as the modified SOP and Exclusive-Or Sum of Products (ESOP) with minimum number of working memristors. We analyze the problem of reduction in IMPLY gate count by adding more working memristors and introduce Imply Sequence Diagrams, a new notation, similar to one used in reversible logic.
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