容错量子电路的t深度优化

Philipp Niemann, Anshu Gupta, R. Drechsler
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引用次数: 7

摘要

由Hadamard门、T门和CNOT门组成的$\ mathm {Clifford}+T$门库在量子电路合成领域引起了很大的兴趣,特别是由于它适用于容错实现。由于$T$门的容错实现具有非常高的延迟,因此该领域的最新工作旨在最小化$T$阶段的数量,称为T深度。在本文中,我们提出了一种利用由多个受控Toffoli门(MCT门)组成的可逆电路映射到$\ mathm {calford}+T$量子电路中的附加辅助量子比特的方法,其主要优化目标是最小化$T$深度。我们提出的方法利用并推广了先前在相应映射算法上的工作。实验评估表明,与以前的方法相比,我们的方法导致显著的$T$深度减少。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
T-depth Optimization for Fault-Tolerant Quantum Circuits
The $\mathrm{Clifford}+T$ gate library consisting of Hadamard, T, and CNOT gates has attracted much interest in quantum circuit synthesis, particularly due to its applicability to fault tolerant realizations. Since fault tolerant implementations of the $T$ gate have very high latency, recent work in this area is aiming at minimizing the number of $T$ stages, referred to as the T-depth. In this paper, we present an approach to exploit additional ancilla qubits in the mapping of reversible circuits consistina of multiple controlled Toffoli gates (MCT gates) into $\mathrm{califford}+T$ quantum circuits, with the primary optimization objective to minimize the $T$-depth. Our proposed approach takes advantage of and generalizes earlier work on corresponding mapping algorithms. An experimental evaluation shows that our approach leads to a significant $T$-depth reduction compared to earlier approaches.
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