电阻式开关存储器快速降压集算法，编程能量低，可靠性显著提高

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894435

Y. Meng, X. Xue, Y. L. Song, J. G. Yang, B. Chen, Y. Y. Lin, Q. Zou, R. Huang, J. Wu

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引用次数: 10

摘要

首次提出了一种无需验证的降压设置/升压重置非对称写入算法。在基于0.18μm逻辑工艺制作的AlOx/WOx双层ReRAM的128Kb测试宏上进行了验证。每比特的设置和复位能量分别降低了34%和20%。set和reset的访问时间分别减少了54%和32%。耐力分布均值由107提高到109，提高了2个数量级。罗恩和罗夫的保留率分别降低了88%和71%。罗夫/罗恩窗口从25×扩大到180×。可靠性的提高是由于采用降压集算法对CF形状和大小进行了细化。

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Fast step-down set algorithm of resistive switching memory with low programming energy and significant reliability improvement

We propose an asymmetric write algorithm of step-down set/step-up reset without verify for the first time. The demonstration is carried out on a 128Kb test macro of AlO_x/WO_x bi-layer ReRAM fabricated based on 0.18μm logic process. The set and reset energy per bit are reduced by 34% and 20% respectively. The set and reset access time decrease by 54% and 32% respectively. The mean value of endurance distribution is improved by 2 orders of magnitude from 10⁷ to 10⁹. R_on and R_off retention failure rate is reduced by 88% and 71% respectively. R_off/R_on window enlarges from 25× to 180×. The reliability improvements are attributed to refinement of CF shape and size by the step-down set algorithm.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量