环氧涂层氮化硅的界面降解

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070) Pub Date : 2000-05-21 DOI:10.1109/ECTC.2000.853184

Jongwoon Park, D. Harlow

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引用次数: 0

摘要

采用低压化学气相沉积法制备氮化膜钝化硅片，并涂覆环氧树脂，对其界面降解进行了表征。高加速应力测试(HAST)条件为121/spl℃，非饱和100%相对湿度。利用光学显微镜监测损伤随时间的变化情况。电镜和x射线光电子能谱分析结果表明，界面处存在两种不同的破坏模式。

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Interfacial degradation of epoxy-coated silicon nitride

A silicon (Si) wafer passivated with a nitride film, fabricated by low-pressure chemical vapor deposition, and coated with epoxy was used as a test specimen to characterized the interfacial degradation. The highly accelerated stress test (HAST) conditions were 121/spl deg/C and unsaturated 100% relative humidity. Optical microscopy was used to monitor the growth of damage as a function of time. Results of electron microscopy and X-ray photoelectron spectrometry (XPS) indicate that two different failure modes exist at the interface.

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2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070)

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