用于下一代光刻技术的z捏缩等离子体极紫外辐射

Conference Record of the 2006 Twenty-Seventh International Power Modulator Symposium Pub Date : 2006-05-14 DOI:10.1109/MODSYM.2006.365258

H. Akiyama, S. Katsuki, T. Namihira, T. Sakugawa, H. Imamura

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引用次数: 0

摘要

高功率极紫外光光源的开发被认为是下一代光刻技术的光源。极紫外光源有两种:放电等离子体(DPP)和激光等离子体(LPP)。DPP方法具有易于辐射大功率极紫外光和低成本制造极紫外光源的优点。脉冲功率驱动的Z夹缩等离子体主要应用于DPP方法。本文总结了熊本大学DPP方法的研究成果。

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Extreme Ultraviolet Radiation from Z-pinch Plasmas for Next Generation Lithography

Development of the high power EUV (extreme ultraviolet) source has been expected as a light source for the next generation lithography. There are two kinds of EUV sources: the discharge produced plasma (DPP) and the laser produced plasma (LPP). The DPP method is considered to be promising in easiness of radiating the high power EUV and in the cheapness of constructing the EUV source. The Z- pinch plasmas driven by pulsed power have been used mainly in the DPP method. Here, the research results of the DPP method at Kumamoto University are summarized.

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Conference Record of the 2006 Twenty-Seventh International Power Modulator Symposium

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