利用无线测温晶圆分析工具间关键尺寸差异的原因

Seunguk Cha, Matteo Rossi, B. Koo, Kwanghyun Jin, V. Jain
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引用次数: 0

摘要

我们使用无线温度测量晶圆片来确定实际生产过程条件下的实际晶圆温度。我们比较了两种光刻胶轨迹工具在烘烤和冷却阶段的温度分布,发现冷却阶段影响沉积膜结构性能的显著差异。发现这些薄膜的变化会影响下游的蚀刻过程,导致其中一个工具中与关键尺寸(CD)变化相关的大量缺陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Using a Wireless Temperature Measurement Wafer to Analyze the Cause of Critical Dimension Differences between Tools
We used a wireless temperature measurement wafer to determine actual wafer temperatures under real production process conditions. We compared the temperature profile during baking and cooling stages between two photoresist track tools and discovered significant differences in the cooling phase affecting the structural properties of the deposited film. These film variations were found to impact the downstream etch process giving rise to a larger number of defects related to Critical Dimension (CD) variation in one of the tools.
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