用于低功耗模拟电路的双栅正反馈场效应晶体管

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242324

M. Kwon, Sungmin Hwang, Myung-Hyun Baek, Seongjae Cho, Byung-Gook Park

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引用次数: 4

摘要

在这项工作中，我们利用直流和瞬态TCAD仿真研究了双栅正反馈场效应晶体管(FBFET)。分析了I-V特性、亚阈值摆幅和瞬态特性。fbet具有陡峭的开关特性和小的关断电流。我们设计了一种可以低功耗工作的fbet逆变器。利用fbet可以有效地抑制模拟电路中的待机电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dual gate positive feedback field-effect transistor for low power analog circuit

In this work, we investigate the dual gate positive feedback field-effect transistor (FBFET) using DC and transient TCAD simulation. I-V characteristics, subthreshold swing, and transient characteristics are analyzed. The FBFET has steep switching property and low off current. We design an inverter that can low power operate with the FBFET. By using the FBFET, the stand-by current is effectively suppressed in analog circuit.

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2017 Silicon Nanoelectronics Workshop (SNW)

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