氟剂量和种植体能量对p+种植顺序对NBTI影响的研究

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628076

Siti Zubaidah Md Saad, T. C. Lik, S. H. Herman

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引用次数: 1

摘要

负偏压温度不稳定性(NBTI)是影响p通道金属氧化物半导体(PMOS)可靠性的主要问题之一，已经被讨论了40多年。本文讨论了氟(F)共植入对NBTI改善、电容和氧化硅(SiO2)厚度的影响，包括F浓度、植入能量和p+区植入顺序。结果表明，除了已知的F剂量和植入物能量对NBTI行为有影响外;植入序列在NBTI降解中也起作用。

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A study of fluorine dose and implant energy to the NBTI upon p+ implant sequence

Negative Bias Temperature Instability (NBTI) is one of the major issues related to p-channel metal-oxide-semiconductor (PMOS) reliability that has been discussed for more than 40 years. In this paper, we discussed the effect of fluorine (F) co-implant to the NBTI improvement, capacitance and silicon oxide (SiO2) thickness in term of F concentration, implant energy and also implant sequence at p+-region. Results suggest that, besides F dose and implant energy that is known to contribute to NBTI behaviors; implant sequence also plays a role in NBTI degradation.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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