半绝缘外延半导体:以InP为例

Proceedings of the 7th Conference on Semi-insulating III-V Materials, Pub Date : 1992-04-21 DOI:10.1109/SIM.1992.752693

J. Garcia, A. Claverie, J. Mimila-Arroyo, J. Bourgoin

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引用次数: 2

摘要

在讨论了各种制备半绝缘InP层的方法后，描述了低温气源分子束外延生长层的结构和电学性质，并探讨了利用该技术制备半绝缘层的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Semi-Insulating Epitaxial Semiconductors: The Case of InP

After a discussion of the various ways to produce semi-insulating InP layers, the structural and electrical properties of layers grown at low temperature by gas source molecular beam epitaxy are described, and the potentialities to obtain semi-insulating layers by this technique are examined.

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Proceedings of the 7th Conference on Semi-insulating III-V Materials,

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