塑料封装装置中迁移的铜电阻短路

P. Yalamanchili, A. Christou
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引用次数: 0

摘要

只提供摘要形式。使用Al-Cu键合垫系统的集成电路器件可能受到基于电解腐蚀的失效机制的影响。迁移性铜电阻短路(MCRS)失效模式是这种机制的一个例子,它导致IC芯片上相邻键垫之间形成丝状或枝晶状的铜沉积。在塑料封装ECL器件中发现了这种失效模式。许多先进的分析技术已被应用,以表征破坏机制。这些技术包括环境扫描电子显微镜(ESEM)、能量色散x射线光谱学(EDX)和c模式扫描声学显微镜(C-SAM)。建立了基于凝结、离子迁移和热活化机理的模型,并用现场返回的失效数据进行了验证。讨论了水分来源、铜和离子污染物加速破坏的机理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Migrated copper resistive shorts in plastic encapsulated devices
Summary form only given. Integrated-circuit devices using the Al-Cu bond pad systems may be subjected to failure mechanisms based on electrolytic corrosion. The migratory copper resistive short (MCRS) failure mode is one example of this mechanism and results in the formation of filamentary or dendritic deposits of copper between adjacent bond pads on the IC chip. Such a failure mode was identified in the plastic encapsulated ECL devices. A number of advanced analytical techniques have been applied in order to characterize the failure mechanism. These techniques included environmental scanning electron microscopy (ESEM), energy dispersive X-ray spectroscopy (EDX) and c-mode scanning acoustic microscopy (C-SAM). A model, based on the physics of condensation, ionic migration and thermally activated mechanism, was developed, and verified with the field returned failure data. The source of moisture, copper and ionic contaminants that accelerate the failure mechanism were also discussed.
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