硅-绝缘子互补双极技术中浅沟隔离充电效应的物理模拟和缓解

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365740

W. Yindeepol, R. Foote, J. De Santis, T. Krakowski, C. Bulucea

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引用次数: 0

摘要

氧化物充电对PNP集电极电容有不利影响，在使用介电隔离的互补双极过程中已经观察到并物理模拟。本文描述了一种缓解这种影响的实用解决方案，以及过程和设备设计中涉及的权衡。

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Physical modeling and alleviation of shallow-trench-isolation charging effects in silicon-on-insulator complementary bipolar technology

Oxide charging, adversely influencing PNP collector-base capacitance, has been observed and modeled physically in a complementary bipolar process that uses dielectric isolation. A practical solution to alleviate this effect is described along with trade-offs involved in process and device design.

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Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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