具有开/关电阻比放大的自限RRAM

2015 Symposium on VLSI Technology (VLSI Technology) Pub Date : 2015-06-16 DOI:10.1109/VLSIT.2015.7223715

S. Jo, T. Kumar, C. Zitlaw, H. Nazarian

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引用次数: 11

摘要

我们以可靠和可控的方式演示了基于自限程序的亚5nm灯丝的电化学金属化RRAM。这种RRAM消除了1TnR (1S1R)架构中任何外部电流遵从性的必要性。此外，我们报告了一种将RRAM的固有ON/OFF电阻比放大>104倍的新技术，这在高密度RRAM中提供了显着的单元，电路和系统级优势，例如降低功耗，降低误码率和增加读取带宽。

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Self-limited RRAM with ON/OFF resistance ratio amplification

We demonstrate sub-5nm filament based electrochemical metallization RRAM with self-limited program in a reliable and controllable manner. This RRAM removes the necessity for any external current compliance in a 1TnR (1S1R) architecture. Furthermore, we report a novel technique to amplify RRAM's intrinsic ON/OFF resistance ratio by a factor of >104, which offers significant cell-, circuit- and system-level benefits such as reduced power, reduced BER and increased read bandwidth in high density RRAM.

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2015 Symposium on VLSI Technology (VLSI Technology)

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