C. Grewing, M. Friedrich, G. Puma, C. Sandner, S. Waasen, A. Wiesbauer, K. Winterberg
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Fully integrated ultra wide band CMOS low noise amplifier
A single ended low noise amplifier (LNA) in distributed amplifier technique for ultra wide band (UWB) fabricated in a standard 0.13 /spl mu/m CMOS technology is presented. Measurement results are given for a chip-on-board module to take possible influences of a product assembly into account. The amplifier provides 15 dB gain with a corner frequency up to 5 GHz, a noise figure of 4.5 dB to 5.5 dB at 50 /spl Omega/ in this frequency range and an input 1 dB-compression point of -5 dBm.
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