低温掺杂镍的硅晶须磁阻特性研究

2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI:10.1109/ELNANO.2017.7939740

A. Druzhinin, I. Ostrovskii, Y. Khoverko, S. Yatsukhnenko

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引用次数: 0

摘要

研究了磁性杂质对硅晶须磁电阻的影响。研究了硅晶体中金属杂质(镍)的转变特征。结果表明，镍杂质与硅晶格之间的相互作用促进了晶体表面磁性团块的形成。极化聚集体(极化子)会影响晶体的输运性质。计算了低温范围内团簇形成的温度。对非合金晶体和含磁性杂质晶体的磁电阻进行对比分析，发现镍杂质对晶体的磁电阻有显著影响。实验证明，在磁场和温度低于150K的影响下，这些样品可以用作微电子器件的开关。

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Peculiarities of magnetoresistance in Si whiskers dopped Ni at cryogenic temperatures

The article deals with the influence of the magnetic impurities on magnetoresistance of silicon whiskers. The features of transition of the metal impurities (nickel) in silicon crystals are investigated. It is shown that the interaction between nickel impurities and the crystal lattice of silicon promotes the formation of magnetic conglomerates on the surface of the crystal. The polarized conglomerates (polarons) can influence the transport properties of the crystal. The temperature of the cluster formation in the range of cryogenic temperatures was also calculated. A comparative analysis of the magnetoresistance of unalloyed crystals and crystals with magnetic impurities showed that the nickel impurity has a significant effect on the magnetoresistance of the crystal. It is proved that these samples can be used as switches in microelectronics under the influence of both the magnetic field and the temperature below 150K.

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2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)

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