多点差分线路驱动器具有高反向阻塞能力的N-ch IGBT

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 1991-04-22 DOI:10.1109/ISPSD.1991.146069

N. Fujishima, Y. Yano, G. Tada, K. Tsuchiya

{"title":"多点差分线路驱动器具有高反向阻塞能力的N-ch IGBT","authors":"N. Fujishima, Y. Yano, G. Tada, K. Tsuchiya","doi":"10.1109/ISPSD.1991.146069","DOIUrl":null,"url":null,"abstract":"A 2 mu m rule DMOS/CMOS compatible IGBT (insulated-gate bipolar transistor) with high reverse blocking capability has been developed for multipoint differential line drivers. Remarkable improvement of the reverse blocking capability and large latch-up current are achieved due to the formation of the wide N-base, the heavily doped N-buffer, and the P-well around the P-base. The effect of the conductivity modulation, arising from the injected holes, is compared with the DMOSFET in series with a P- nu -N diode.<<ETX>>","PeriodicalId":127986,"journal":{"name":"[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"N-ch IGBT with high reverse blocking capability for multipoint differential line drivers\",\"authors\":\"N. Fujishima, Y. Yano, G. Tada, K. Tsuchiya\",\"doi\":\"10.1109/ISPSD.1991.146069\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 2 mu m rule DMOS/CMOS compatible IGBT (insulated-gate bipolar transistor) with high reverse blocking capability has been developed for multipoint differential line drivers. Remarkable improvement of the reverse blocking capability and large latch-up current are achieved due to the formation of the wide N-base, the heavily doped N-buffer, and the P-well around the P-base. The effect of the conductivity modulation, arising from the injected holes, is compared with the DMOSFET in series with a P- nu -N diode.<<ETX>>\",\"PeriodicalId\":127986,\"journal\":{\"name\":\"[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1991.146069\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1991.146069","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

开发了一种具有高反向阻塞能力的2 μ m规则DMOS/CMOS兼容IGBT(绝缘栅双极晶体管)，用于多点差分线路驱动器。由于形成了宽的n基、重掺杂的n缓冲液和p基周围的p阱，使得反向阻断能力和大的锁存电流得到了显著的改善。通过与P- nu - n二极管串联的DMOSFET进行比较，研究了由注入孔引起的电导率调制效应。

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N-ch IGBT with high reverse blocking capability for multipoint differential line drivers

A 2 mu m rule DMOS/CMOS compatible IGBT (insulated-gate bipolar transistor) with high reverse blocking capability has been developed for multipoint differential line drivers. Remarkable improvement of the reverse blocking capability and large latch-up current are achieved due to the formation of the wide N-base, the heavily doped N-buffer, and the P-well around the P-base. The effect of the conductivity modulation, arising from the injected holes, is compared with the DMOSFET in series with a P- nu -N diode.<>

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来源期刊

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs

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