12.7kV超高压SiC整流栅关断晶闸管:SICGT

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.240155

Y. Sugawara, D. Takayama, K. Asano, A. Agarwal, S. Ryu, J. Palmour, S. Ogata

{"title":"12.7kV超高压SiC整流栅关断晶闸管:SICGT","authors":"Y. Sugawara, D. Takayama, K. Asano, A. Agarwal, S. Ryu, J. Palmour, S. Ogata","doi":"10.1109/WCT.2004.240155","DOIUrl":null,"url":null,"abstract":"A novel 12.7 kV SiC SICGT (SiC commutated gate turn-off thyristor) was developed for on-line uses in power utility applications, which has the highest blocking voltage among the reported semiconductor switching devices. Its leakage current is low and is less than 1/spl times/10/sup -3/ A/cm/sup 2/ at 9 kV and at 250/spl deg/C. Its on-state voltage at 100 A/cm/sup 2/ is 6.6 V and is lower than that of a 9 kV Si GTO, which is composed of two 4.5 kV GTOs connected in series. Its turn-on time and turn-off time are 0.22 /spl mu/s and 2.68 /spl mu/s respectively, which are about 1/50 and 1/10 of a commercialized 6 kV 6 kA Si-GTO. A PWM half bridge inverter composed of SICGTs demonstrated an output voltage of /spl plusmn/1.25 kV and output power of 0.8 kVA respectively, which are the highest values among the reported SiC half bridge inverters.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"213 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":"{\"title\":\"12.7kV ultra high voltage SiC commutated gate turn-off thyristor: SICGT\",\"authors\":\"Y. Sugawara, D. Takayama, K. Asano, A. Agarwal, S. Ryu, J. Palmour, S. Ogata\",\"doi\":\"10.1109/WCT.2004.240155\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel 12.7 kV SiC SICGT (SiC commutated gate turn-off thyristor) was developed for on-line uses in power utility applications, which has the highest blocking voltage among the reported semiconductor switching devices. Its leakage current is low and is less than 1/spl times/10/sup -3/ A/cm/sup 2/ at 9 kV and at 250/spl deg/C. Its on-state voltage at 100 A/cm/sup 2/ is 6.6 V and is lower than that of a 9 kV Si GTO, which is composed of two 4.5 kV GTOs connected in series. Its turn-on time and turn-off time are 0.22 /spl mu/s and 2.68 /spl mu/s respectively, which are about 1/50 and 1/10 of a commercialized 6 kV 6 kA Si-GTO. A PWM half bridge inverter composed of SICGTs demonstrated an output voltage of /spl plusmn/1.25 kV and output power of 0.8 kVA respectively, which are the highest values among the reported SiC half bridge inverters.\",\"PeriodicalId\":303825,\"journal\":{\"name\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"213 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"33\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCT.2004.240155\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.240155","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 33

摘要

开发了一种新型的12.7 kV SiC换向栅关断晶闸管(SICGT)，用于电力公用事业的在线应用，在已报道的半导体开关器件中具有最高的阻断电压。它的泄漏电流小，在9 kV和250/spl℃时小于1/spl倍/10/sup -3/ A/cm/sup 2/。它在100 A/cm/sup 2/时的导通电压为6.6 V，低于由两个4.5 kV GTO串联而成的9kv Si GTO。其通断时间和关断时间分别为0.22 /spl mu/s和2.68 /spl mu/s，约为6 kV 6 kA Si-GTO商业化的1/50和1/10。由sicgt组成的PWM半桥逆变器的输出电压为/spl plusmn/1.25 kV，输出功率为0.8 kVA，是目前报道的SiC半桥逆变器中最高的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

12.7kV ultra high voltage SiC commutated gate turn-off thyristor: SICGT

A novel 12.7 kV SiC SICGT (SiC commutated gate turn-off thyristor) was developed for on-line uses in power utility applications, which has the highest blocking voltage among the reported semiconductor switching devices. Its leakage current is low and is less than 1/spl times/10/sup -3/ A/cm/sup 2/ at 9 kV and at 250/spl deg/C. Its on-state voltage at 100 A/cm/sup 2/ is 6.6 V and is lower than that of a 9 kV Si GTO, which is composed of two 4.5 kV GTOs connected in series. Its turn-on time and turn-off time are 0.22 /spl mu/s and 2.68 /spl mu/s respectively, which are about 1/50 and 1/10 of a commercialized 6 kV 6 kA Si-GTO. A PWM half bridge inverter composed of SICGTs demonstrated an output voltage of /spl plusmn/1.25 kV and output power of 0.8 kVA respectively, which are the highest values among the reported SiC half bridge inverters.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

自引率

0.00%

发文量