单极脉冲斜坡对MOS栅氧化物可靠性表征的评估

IEEE 1995 International Integrated Reliability Workshop. Final Report Pub Date : 1995-10-22 DOI:10.1109/IRWS.1995.493595

A. Martin, P. O'Sullivan, A. Mathewson

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引用次数: 4

摘要

将单极脉冲坡道与常用的阶梯坡道进行了比较。RVS和组合RVS/CVS测量在MOS栅极氧化物上进行，使用两种类型的坡道和广泛的坡道参数。实验结果表明，单极脉冲坡道与阶梯坡道具有相同的测量结果。

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Assessment of a unipolar pulsed ramp for the characterisation of MOS gate oxide reliability

The unipolar pulsed ramp is compared to the commonly used staircase ramp. RVS and combined RVS/CVS measurements are performed on MOS gate oxides using both types of ramps with a wide range of ramp parameters. From the experiments it can be concluded that the unipolar pulsed ramp shows identical measurement results to the staircase ramp.

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IEEE 1995 International Integrated Reliability Workshop. Final Report

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