锑基中红外带间级联激光器的生长与性能研究进展

W. Bewley, C. Canedy, C. Kim, M. Kim, J. Lindle, J. Abell, I. Vurgaftman, J. Meyer
{"title":"锑基中红外带间级联激光器的生长与性能研究进展","authors":"W. Bewley, C. Canedy, C. Kim, M. Kim, J. Lindle, J. Abell, I. Vurgaftman, J. Meyer","doi":"10.1109/ICIPRM.2010.5515970","DOIUrl":null,"url":null,"abstract":"We discuss the growth and state-of-the-art performance characteristics of mid-infrared interband cascade lasers. Broad-area devices with 5 active stages display pulsed threshold current densities as low as 400 A/cm2 at room temperature, owing to an unexpectedly strong suppression of Auger recombination. New designs also produce lasers with internal losses as low as ≈ 6 cm−1 at room temperature. We also study the performance of narrow ridges that dissipate heat efficiently for high-temperature cw operation. The degradations of the threshold current density and differential slope efficiency are modest until the ridge width is decreased to 3 μm. A 13-μm-wide uncoated ridge produces up to 45 mW of cw power at 293 K, and displays a maximum wall-plug efficiency of 3.5%. A 5-μm-wide 3-mm-long ridge without any facet coatings operates cw to 345 K, which is a new record high temperature for any semiconductor laser emitting in the 3.0–4.6 μm spectral range.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advances in the growth and performance of antimonide-based mid-infrared interband cascade lasers\",\"authors\":\"W. Bewley, C. Canedy, C. Kim, M. Kim, J. Lindle, J. Abell, I. Vurgaftman, J. Meyer\",\"doi\":\"10.1109/ICIPRM.2010.5515970\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We discuss the growth and state-of-the-art performance characteristics of mid-infrared interband cascade lasers. Broad-area devices with 5 active stages display pulsed threshold current densities as low as 400 A/cm2 at room temperature, owing to an unexpectedly strong suppression of Auger recombination. New designs also produce lasers with internal losses as low as ≈ 6 cm−1 at room temperature. We also study the performance of narrow ridges that dissipate heat efficiently for high-temperature cw operation. The degradations of the threshold current density and differential slope efficiency are modest until the ridge width is decreased to 3 μm. A 13-μm-wide uncoated ridge produces up to 45 mW of cw power at 293 K, and displays a maximum wall-plug efficiency of 3.5%. A 5-μm-wide 3-mm-long ridge without any facet coatings operates cw to 345 K, which is a new record high temperature for any semiconductor laser emitting in the 3.0–4.6 μm spectral range.\",\"PeriodicalId\":197102,\"journal\":{\"name\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2010.5515970\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5515970","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

我们讨论了中红外波段间级联激光器的发展和最新性能特征。具有5个有源级的广域器件在室温下显示脉冲阈值电流密度低至400 A/cm2,这是由于对埃歇复合的出乎意料的强抑制。新的设计也生产出在室温下内部损耗低至≈6 cm−1的激光器。我们还研究了窄脊在高温连续工作中有效散热的性能。在脊宽减小到3 μm之前,阈值电流密度和差分斜率效率的下降幅度不大。一个13 μm宽的无涂层脊在293 K下产生高达45 mW的连续波功率,并显示出3.5%的最大壁插效率。一个5 μm宽3 mm长的脊线,在没有任何表面涂层的情况下工作到345 K,这是在3.0-4.6 μm光谱范围内发射的半导体激光器的新高温记录。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advances in the growth and performance of antimonide-based mid-infrared interband cascade lasers
We discuss the growth and state-of-the-art performance characteristics of mid-infrared interband cascade lasers. Broad-area devices with 5 active stages display pulsed threshold current densities as low as 400 A/cm2 at room temperature, owing to an unexpectedly strong suppression of Auger recombination. New designs also produce lasers with internal losses as low as ≈ 6 cm−1 at room temperature. We also study the performance of narrow ridges that dissipate heat efficiently for high-temperature cw operation. The degradations of the threshold current density and differential slope efficiency are modest until the ridge width is decreased to 3 μm. A 13-μm-wide uncoated ridge produces up to 45 mW of cw power at 293 K, and displays a maximum wall-plug efficiency of 3.5%. A 5-μm-wide 3-mm-long ridge without any facet coatings operates cw to 345 K, which is a new record high temperature for any semiconductor laser emitting in the 3.0–4.6 μm spectral range.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信