基于氧化物的RRAM中快速低电流(<10μA)阻性开关的氧化学势分布优化

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI:10.1109/VLSI-TSA.2016.7480500

C. Y. Chen, L. Goux, A. Fantini, A. Redolfi, G. Groeseneken, M. Jurczak

{"title":"基于氧化物的RRAM中快速低电流(<10μA)阻性开关的氧化学势分布优化","authors":"C. Y. Chen, L. Goux, A. Fantini, A. Redolfi, G. Groeseneken, M. Jurczak","doi":"10.1109/VLSI-TSA.2016.7480500","DOIUrl":null,"url":null,"abstract":"We explain in detail how to optimize the oxygen chemical potential profile of Ta2O5-based stack to improve switching speed at reduced operating current (<;10μA). Using industry-relevant programming scheme, we demonstrate an oxide-based RRAM stack giving large on/off ratio (~x200) while the good reliability properties are preserved.","PeriodicalId":441941,"journal":{"name":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Oxygen chemical potential profile optimization for fast low current (<10μA) resistive switching in oxide-based RRAM\",\"authors\":\"C. Y. Chen, L. Goux, A. Fantini, A. Redolfi, G. Groeseneken, M. Jurczak\",\"doi\":\"10.1109/VLSI-TSA.2016.7480500\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We explain in detail how to optimize the oxygen chemical potential profile of Ta2O5-based stack to improve switching speed at reduced operating current (<;10μA). Using industry-relevant programming scheme, we demonstrate an oxide-based RRAM stack giving large on/off ratio (~x200) while the good reliability properties are preserved.\",\"PeriodicalId\":441941,\"journal\":{\"name\":\"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"volume\":\"123 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2016.7480500\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2016.7480500","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们详细解释了如何优化基于ta2o5的堆叠的氧化学势分布，以提高在降低工作电流(< 10μA)下的开关速度。利用工业相关的编程方案，我们展示了一种基于氧化物的RRAM堆栈，在保持良好可靠性的同时，具有大的开/关比(~x200)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Oxygen chemical potential profile optimization for fast low current (<10μA) resistive switching in oxide-based RRAM

We explain in detail how to optimize the oxygen chemical potential profile of Ta2O5-based stack to improve switching speed at reduced operating current (<;10μA). Using industry-relevant programming scheme, we demonstrate an oxide-based RRAM stack giving large on/off ratio (~x200) while the good reliability properties are preserved.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

自引率

0.00%

发文量