{"title":"调制掺杂异质结场效应晶体管横向延迟的建模","authors":"W. Xu, Ashok K. Goel","doi":"10.1109/GLSV.1991.143988","DOIUrl":null,"url":null,"abstract":"The authors have developed a computer-efficient algorithm and the related CAD oriented software to calculate the transverse propagation delay in a MODFET. The model has been used to study the dependence of these delays on the various MODFET parameters. The results can be utilized for the optimization of high-speed circuits.<<ETX>>","PeriodicalId":261873,"journal":{"name":"[1991] Proceedings. First Great Lakes Symposium on VLSI","volume":"231 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling of the transverse delays in modulation-doped heterojunction field-effect transistors\",\"authors\":\"W. Xu, Ashok K. Goel\",\"doi\":\"10.1109/GLSV.1991.143988\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors have developed a computer-efficient algorithm and the related CAD oriented software to calculate the transverse propagation delay in a MODFET. The model has been used to study the dependence of these delays on the various MODFET parameters. The results can be utilized for the optimization of high-speed circuits.<<ETX>>\",\"PeriodicalId\":261873,\"journal\":{\"name\":\"[1991] Proceedings. First Great Lakes Symposium on VLSI\",\"volume\":\"231 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] Proceedings. First Great Lakes Symposium on VLSI\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GLSV.1991.143988\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] Proceedings. First Great Lakes Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GLSV.1991.143988","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of the transverse delays in modulation-doped heterojunction field-effect transistors
The authors have developed a computer-efficient algorithm and the related CAD oriented software to calculate the transverse propagation delay in a MODFET. The model has been used to study the dependence of these delays on the various MODFET parameters. The results can be utilized for the optimization of high-speed circuits.<>