一种具有本征反导能力和低栅极电荷的分栅垂直GaN功率晶体管

R. Zhu, Qi Zhou, H. Tao, Yi Yang, Kai Hu, D. Wei, Liyang Zhu, Yuanyuan Shi, Wanjun Chen, X. Luo, Bo Zhang
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引用次数: 9

摘要

在这项工作中,提出了一种具有本征反导(RCVFET)功能和低栅极电容的垂直正常关断GaN器件,并进行了仿真研究。与横向AlGaN/GaN HEMT不同,本文提出的RCVFET的RC特性与器件的阈值电压无关,而获得0.8 V的低VR, ON。由于分栅设计,栅极电荷显著降低,有利于提高RCVFET的开关速度。该设备的Ron为0.93 mΩ。cm2, BV 1280V。反向恢复时间为13ns。QGD为80nc,仅为参考器件无分栅时得到的QGD的五分之一。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A split gate vertical GaN power transistor with intrinsic reverse conduction capability and low gate charge
In this work, a vertical normally-off GaN device featuring split-gate with intrinsic reverse conduction (RCVFET) functionality and low gate capacitance is proposed and studied by simulation. Different from the lateral AlGaN/GaN HEMT, the RC characteristics of the proposed RCVFET are independent with the threshold voltage of the device, while a low VR, ON of 0.8 V is obtained. Owing to the split-gate design, the gate charge is respectably reduced that is beneficial for improving the switching speed of the RCVFET. The device exhibits a low Ron of 0.93 mΩ.cm2 and a BV of 1280V. The reverse recovery time is 13ns. The QGD is 80 nC that is only one fifth of that obtained in the reference device without split-gate.
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