ABACUS:两个用于读出LGAD检测器的快速放大器

G. Mazza, F. Fausti, J. Olave, V. Monaco, R. Sacchi, R. Cirio
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引用次数: 4

摘要

基于低增益雪崩二极管的治疗质子束单粒子计数器的设计是在INFN MoveIt研究项目的框架内进行的,该二极管针对非常快的信号进行了优化。在这种应用中,为了处理数百兆赫的粒子速率,快速信号整形前端电子器件是强制性的。两种前置放大器架构,一种基于具有自复位功能的快速电荷敏感放大器,另一种基于跨阻抗放大器,已在商用CMOS 0.11 μm技术上开发并提交给代工厂。a INFN sezione di Torino, 10125 Torino, b Politecnico di Torino, 10129 Torino, c universitiono di Torino, Dipartimento di Fisica, 10125 Torino, Italy . R. Cirio, F. Fausti, G. Mazza, V. Monaco, J. Olave, R. Sacchi低增益雪崩二极管(LGAD)要求:快速计数率(100mhz或更高)快速上升时间→不够,全信号形状必须短。正在评估的两种配置:电荷敏感放大器(CSA)跨阻放大器(TIA) CSA:上升时间快,噪声比TIA低,但下降沿有缓慢的自复位能力→TIA:速度快,但噪声也高。权衡带宽,开环增益和输入电容f−3dB≈12 π A RF CD 1。CSA前置放大器OTA缓冲器鉴别器阶段1鉴别器阶段2单端差压变换器CML驱动程序阈值调优DAC(6位)脉冲发生器恢复区块10。逆变器基于csa的读出通道tia的读出通道1。跨阻前置放大器增益阶段3。鉴频器4。CML驱动程序鉴别器差分阈值发生器跨阻放大器架构两级核心放大器,具有全局电阻反馈:高开环增益,对输入电容变化敏感,由电流缓冲器驱动的差分输入单级核心放大器,独立于TIA输入电容,独立于检测器电容,单端输入,第一级无增益,模拟结果示例,两个检测器正在测试:输入电容C D ~ 3-6 pF信号(质子):4-150 fC(增益15)信号(碳离子):30 - 150 fC(增益1)输入数据从Weightfield2和GEANT模拟预测环境中获得。每个信道的平均粒子率分别为50、100、150、200和250 MHz。CSA通道在100和200 MHz以及60 MeV和250 MeV质子能量下的后布局模拟细节。在200 MHz速率下的TIA v1通道的后布局仿真。质子能量250兆电子伏。摘要与展望:设计并制作了两个用于快速计数穿过LGAD硅探测器的24通道原型。第一个原型是基于电荷敏感的自复位放大器。第二个原型是基于跨阻放大器架构。本设计实现了两个子版本。两种设计均采用CMOS 0.11 μm技术,供电电压为1.2 V。功耗约为20 mW/通道。原型测试将于2018年秋季开始
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ABACUS : Two fast amplifiers for the readout of LGAD detectors
: The design of a single particle counter for therapeutical proton beams based on Low Gain Avalanche Diodes optimized for very fast signals is carried on in the framework of the INFN MoveIt research project. Fast signal shaping front­end electronics is mandatory in this application in order to deal with particle rates of the order of hundreds of MHz. Two preamplifier architectures, one based on a fast Charge Sensitive Amplifier with self­reset capabilities and a second one based on a Trans­Impedance Amplifier have been developed in a commercial CMOS 0.11 μm technology and submitted to the foundry. a INFN sezione di Torino, 10125 Torino, Italy b Politecnico di Torino, 10129 Torino, Italy c Università di Torino, Dipartimento di Fisica, 10125 Torino, Italy R. Cirio, F. Fausti, G. Mazza, V. Monaco, J. Olave, R. Sacchi Low Gain Avalanche Diode (LGAD) Requirement : fast counting rate (100 MHz or better fast rise time → not sufficient,the full signal shape must be short. Two configurations under evaluation : 1. Charge Sensitive Amplifier (CSA) 2. TransImpedance Amplifier (TIA) CSA : fast rising time and lower noise than TIA, but the falling edge can be slow self reset capability → TIA : faster but also higher noise. Trade off between bandwidth, open loop gain and input capacitance f −3dB≈ 1 2π A RF CD 1. CSA preamplfier 2. OTA buffer 3. Discriminator stage 1 4. Discriminator stage 2 5. Single­ended to diff converter 6. CML driver 7. Threshold tuning DAC (6­bit) 8. Pulse generator 9. Recovery block 10. Inverters CSA­based readout channel TIA­based readout channel 1. Transimpedance preamplifier 2. Gain stage 3. Discriminator 4. CML driver 5. Discriminator differential threshold generator Transimpedance Amplifier architectures Two stages core amplifier with global resistive feedback : ✔ Higher open loop gain ✗ Sensitive to input capacitance variations ✗ Differential input Single stage core amplifier driven by a current buffer : ✔ TIA input capacitance independent from detector capacitance ✔ Single ended input ✗ No gain on the first stage Simulation result examples Two detectors under test : length 15 mm, width 80 μm, pitch 146 μm and length 30 mm, width 150 μm, pitch 216 μm Input capacitance C D ~ 3­6 pF Signal (protons) : 4­150 fC (with gain 15) Signal (carbon ions) : 30­150 fC (with gain 1) Input data obtained from Weightfield2 and GEANT simulations for the predicted environment. Average particle rate per channel are 50, 100, 150, 200 and 250 MHz. Post layout simulations detail for the CSA channel for 100 and 200 MHz and 60 MeV and 250 MeV proton energy. Post layout simulations for the TIA v1 channel at 200 MHz rate. Proton energy 250 MeV. Summary and outlook  Two 24­channels prototypes for the fast count of particles crossing a LGAD silicon detector have been designed and produced.  The first prototype is based on a charge sensitive amplier with self­reset  The second prototype is based on a transimpedance amplifier architecture. Two sub­version of this design have been realized.  Both designs have been made in a CMOS 0.11 μm technology powered at 1.2 V  The power consumption is of the order of 20 mW/channel.  Prototype tests will start on Fall 2018
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