Indranil Palit, Qiuwen Lou, M. Niemier, B. Sedighi, J. Nahas, X. Hu
{"title":"使用陡坡装置的细胞神经网络图像分析","authors":"Indranil Palit, Qiuwen Lou, M. Niemier, B. Sedighi, J. Nahas, X. Hu","doi":"10.1109/ICCAD.2014.7001337","DOIUrl":null,"url":null,"abstract":"Traditional CMOS based von Neumann architectures face daunting challenges in performing complex computational tasks at high speed and with low power on spatio-temporal data, e.g., image processing, pattern recognition, etc. In this study, we discuss the utilities of various steep slope, beyond-CMOS emerging devices for image processing applications within the non-von Neumann computing paradigm of cellular neural networks (CNNs). In general, the steep subthreshold swing of the devices obviates the output transfer hardware used in a conventional CNN cell. For image processing with binary stable outputs, Tunnelling FETs (TFETs) can facilitate low power operation. For multi-valued problems, devices like graphene transistors, Symmetric tunnelling FETs (SymFETs) might be leveraged to solve a problem with fewer computational steps. The potential for additional hardware reduction when compared to functional equivalents via conventional CNNs is also possible. Emerging devices can also lead to lower power implementations of the voltage controlled current sources (VCCSs) that are an integral component of any CNN cell. Furthermore, non-linear implementations of the VCCSs via emerging devices could enable simpler computational paths for many image processing tasks.","PeriodicalId":426584,"journal":{"name":"2014 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)","volume":"174 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Cellular neural networks for image analysis using steep slope devices\",\"authors\":\"Indranil Palit, Qiuwen Lou, M. Niemier, B. Sedighi, J. Nahas, X. Hu\",\"doi\":\"10.1109/ICCAD.2014.7001337\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Traditional CMOS based von Neumann architectures face daunting challenges in performing complex computational tasks at high speed and with low power on spatio-temporal data, e.g., image processing, pattern recognition, etc. In this study, we discuss the utilities of various steep slope, beyond-CMOS emerging devices for image processing applications within the non-von Neumann computing paradigm of cellular neural networks (CNNs). In general, the steep subthreshold swing of the devices obviates the output transfer hardware used in a conventional CNN cell. For image processing with binary stable outputs, Tunnelling FETs (TFETs) can facilitate low power operation. For multi-valued problems, devices like graphene transistors, Symmetric tunnelling FETs (SymFETs) might be leveraged to solve a problem with fewer computational steps. The potential for additional hardware reduction when compared to functional equivalents via conventional CNNs is also possible. Emerging devices can also lead to lower power implementations of the voltage controlled current sources (VCCSs) that are an integral component of any CNN cell. Furthermore, non-linear implementations of the VCCSs via emerging devices could enable simpler computational paths for many image processing tasks.\",\"PeriodicalId\":426584,\"journal\":{\"name\":\"2014 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)\",\"volume\":\"174 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCAD.2014.7001337\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCAD.2014.7001337","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Cellular neural networks for image analysis using steep slope devices
Traditional CMOS based von Neumann architectures face daunting challenges in performing complex computational tasks at high speed and with low power on spatio-temporal data, e.g., image processing, pattern recognition, etc. In this study, we discuss the utilities of various steep slope, beyond-CMOS emerging devices for image processing applications within the non-von Neumann computing paradigm of cellular neural networks (CNNs). In general, the steep subthreshold swing of the devices obviates the output transfer hardware used in a conventional CNN cell. For image processing with binary stable outputs, Tunnelling FETs (TFETs) can facilitate low power operation. For multi-valued problems, devices like graphene transistors, Symmetric tunnelling FETs (SymFETs) might be leveraged to solve a problem with fewer computational steps. The potential for additional hardware reduction when compared to functional equivalents via conventional CNNs is also possible. Emerging devices can also lead to lower power implementations of the voltage controlled current sources (VCCSs) that are an integral component of any CNN cell. Furthermore, non-linear implementations of the VCCSs via emerging devices could enable simpler computational paths for many image processing tasks.