{"title":"mos电容器寿命测量技术的实验比较","authors":"C. Morandi, G. Spadini","doi":"10.1049/IJ-SSED.1978.0034","DOIUrl":null,"url":null,"abstract":"Three techniques commonly used to determine lifetime in m.o.s. capacitors are compared experimentally and very good agreement is found. It is shown that, in favourable circumstances, the combined use of the three may help to localise the active defect in the forbidden gap. Finally, some experimental results obtained with two of the techniques over a wide temperature range are discussed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Experimental comparison of lifetime-measurement techniques for m.o.s. capacitors\",\"authors\":\"C. Morandi, G. Spadini\",\"doi\":\"10.1049/IJ-SSED.1978.0034\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three techniques commonly used to determine lifetime in m.o.s. capacitors are compared experimentally and very good agreement is found. It is shown that, in favourable circumstances, the combined use of the three may help to localise the active defect in the forbidden gap. Finally, some experimental results obtained with two of the techniques over a wide temperature range are discussed.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED.1978.0034\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED.1978.0034","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Experimental comparison of lifetime-measurement techniques for m.o.s. capacitors
Three techniques commonly used to determine lifetime in m.o.s. capacitors are compared experimentally and very good agreement is found. It is shown that, in favourable circumstances, the combined use of the three may help to localise the active defect in the forbidden gap. Finally, some experimental results obtained with two of the techniques over a wide temperature range are discussed.
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