低损伤翘曲片的灰化工艺

2021 China Semiconductor Technology International Conference (CSTIC) Pub Date : 2021-03-14 DOI:10.1109/CSTIC52283.2021.9461448

Zihan Dong, Yuanwei Lin, Yuwei Kong

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引用次数: 0

摘要

为了提高聚酰亚胺(PI)或光刻胶(PR)在翘曲片上灰化/条带化的表面质量，必须克服起弧、剥落和损坏的问题。在这项工作中，我们展示了一种用于12英寸翘曲晶圆的时间复用交替灰化(TMAA)工艺。TMAA工艺可以降低电弧和剥落的风险，具有更高的均匀性。因此，TMAA工艺是一种低成本、高效率的先进封装表面处理方法。

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Ashing Process on Warpage Wafer with Low Damage

To improve the surface quality of polyimide (PI) or photoresist (PR) ashing/striping on warpage wafer, the issues of arcing, peeling and damage should be overcome. In this work, we demonstrate a time-multiplexed alternating ashing (TMAA) process for 12-inch warpage wafer. The TMAA process can reduce the risk of arcing and peeling with higher uniformity. Therefore, the TMAA process is a low cost and highly efficient method for the surface treatment in advanced packaging.

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2021 China Semiconductor Technology International Conference (CSTIC)

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