A. Nourbakhsh, Ahmad Zubair, S. Huang, X. Ling, M. Dresselhaus, J. Kong, S. De Gendt, T. Palacios
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15-nm channel length MoS2 FETs with single- and double-gate structures
We demonstrate single- and double-gated (SG & DG) field effect transistors (FETs) with a record source-drain length (LS/D) of 15 nm built on monolayer (tch~0.7 nm) and 4-layer (tch~3 nm) MoS2 channels using monolayer graphene as the Source/Drain contacts. The best devices, corresponding to DG 4-layer MoS2-FETs with LS/D=15 nm, had an Ion/Ioff in excess of 106 and a minimum subthreshold swing (SSmin.) of 90 mV/dec. at VDS=0.5 V. At LS/D=1 μm and VDS=0.5 V, SSmin.=66 mV/dec., which is the best SS reported in MoS2 FETs, indicating the high quality of the interface and the enhanced channel electrostatics.
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