{"title":"基于GaN/AlGaN/GaN平台互补集成技术的新型背靠背梯度AlGaN势垒","authors":"Jinggui Zhou, H. Do, M. M. De Souza","doi":"10.1109/EDTM55494.2023.10103055","DOIUrl":null,"url":null,"abstract":"A novel composite barrier layer with back-to-back graded AlGaN in a GaN/AlGaN/GaN epitaxial structure for high performance n- and p-channel devices on the same platform is proposed. By adjusting the relative thicknesses of the two graded layers, we obtain a spread in the width and concentration of carriers in the 3D slabs. The best barrier amongst those studied, enhances the on-current $(I_{ON})$ by 24.4% in low voltage n-channel devices, 32.2% the p-channel devices whereas the figure of merit of the power device is higher by 3 times, in comparison to the conventional platform.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A new back-to-back graded AlGaN barrier for complementary integration technique based on GaN/AlGaN/GaN platform\",\"authors\":\"Jinggui Zhou, H. Do, M. M. De Souza\",\"doi\":\"10.1109/EDTM55494.2023.10103055\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel composite barrier layer with back-to-back graded AlGaN in a GaN/AlGaN/GaN epitaxial structure for high performance n- and p-channel devices on the same platform is proposed. By adjusting the relative thicknesses of the two graded layers, we obtain a spread in the width and concentration of carriers in the 3D slabs. The best barrier amongst those studied, enhances the on-current $(I_{ON})$ by 24.4% in low voltage n-channel devices, 32.2% the p-channel devices whereas the figure of merit of the power device is higher by 3 times, in comparison to the conventional platform.\",\"PeriodicalId\":418413,\"journal\":{\"name\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM55494.2023.10103055\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new back-to-back graded AlGaN barrier for complementary integration technique based on GaN/AlGaN/GaN platform
A novel composite barrier layer with back-to-back graded AlGaN in a GaN/AlGaN/GaN epitaxial structure for high performance n- and p-channel devices on the same platform is proposed. By adjusting the relative thicknesses of the two graded layers, we obtain a spread in the width and concentration of carriers in the 3D slabs. The best barrier amongst those studied, enhances the on-current $(I_{ON})$ by 24.4% in low voltage n-channel devices, 32.2% the p-channel devices whereas the figure of merit of the power device is higher by 3 times, in comparison to the conventional platform.
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