7nm及以下工艺的良率和可靠性挑战

A. Strojwas, K. Doong, D. Ciplickas
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引用次数: 0

摘要

布局设计规则已经非常积极地扩展,以使7nm技术节点没有EUV。因此,在大批量生产(HVM)中实现可接受的性能和良率已成为一项极具挑战性的任务。系统产量和参数变异性变得相当显著。此外,由于覆盖公差要求和工艺窗口的减少,FEOL和BEOL的软短路/泄漏和软打开导致的可靠性风险也增加到了临界水平。在7nm和5nm的第二波引入EUV不会有明显的帮助,因为探测率会增加,局部边缘粗糙度也会显著增加。需要新的表征技术来识别成品率和可靠性风险。在回顾了设计规则的演变并对良率和可靠性风险进行分类之后,我们将介绍design - for - inspection™(DFI™)和新的VarScan方法的例子,以“检测不可检测”的缺陷,并表征FEOL和BEOL 7nm及以下技术的可变性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Yield and Reliability Challenges at 7nm and Below
Layout Design Rules have been scaled very aggressively to enable the 7nm technology node without EUV. As a result, achieving acceptable performance and yield in High Volume Manufacturing (HVM) has become an extremely challenging task. Systematic yield and parametric variabilities have become quite significant. Moreover, due to overlay tolerance requirements and diminishing process windows, reliability risks due to soft shorts/leakages and soft opens for both FEOL and BEOL have also increased to a critical level. Introduction of EUV at the second wave of 7nm and 5nm will not help significantly due to increased detectivity and significant increases in Local Edge Roughness. New characterization techniques are necessary to identify the yield and reliability risks. After reviewing the evolution of design rules and classifying the yield and reliability risks, we will present examples from Design-For-Inspection™ (DFI™) and the novel VarScan methodology to "detect the undetectable" defects and characterize variability for both FEOL and BEOL 7nm and below technologies.
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