势垒组成对InGaN多量子阱紫外发光二极管光输出的影响

A. Knauer, V. Kueller, S. Einfeldt, V. Hoffmann, T. Kolbe, J.-R. van Look, J. Piprek, M. Weyers, M. Kneissl
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引用次数: 11

摘要

为了研究势垒组成对近紫外器件光输出特性的影响,在c-平面(0001)蓝宝石上生长具有GaN、Al0.16Ga0.84N和inxal0.16 GaN势垒层的InGaN多量子阱(MQW)发光二极管(led)。通过用Al0.16Ga0.84N取代GaN势垒层,由于In0.03Ga0.97N量子阱与势垒之间的带偏增加,输出功率增加了30倍。在氮化镓势垒中添加3.3%的铟,可以降低FWHM,并且与具有氮化镓势垒的led相比,光输出功率增加了50倍。尽管InAlGaN势垒的带偏和载流子约束比AlGaN势垒小,但应变补偿的In0.03Al0.16Ga0.79N势垒层似乎对近紫外led的外量子效率非常有益。研究了在MQW层叠下方插入n型Al0.23Ga0.77N空穴阻挡层以防止UV LED有源区空穴载流子泄漏对光输出的影响。通过结合应变补偿的In0.03Al0.16Ga0.79N势垒和Al0.23Ga0.77N孔阻挡层,我们能够在100 mA下实现输出为1 mW的375 nm led(在片上测量)。最后,展示了波长较长的InGaN mqw UV led的光输出波长依赖关系,波长在375 nm和381nm之间,在200ma时峰值输出功率为4mw。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes
MOVPE grown InGaN multiple-quantum-well (MQW) light emitting diodes (LEDs) on c-plane (0001) sapphire emitting at 375 nm with GaN, Al0.16Ga0.84N and InxAl0.16GaN-barrier layers were investigated in order to study the influence of the barrier composition on the light output characteristics of near UV devices. By substituting the GaN barrier layers with Al0.16Ga0.84N the output power increased 30-fold due to the increased band-offset between the In0.03Ga0.97N QWs and the barriers. The addition of 3.3% indium to the AlGaN barriers resulted in a reduction of the FWHM, and a 50-fold increase in light output power compared to LEDs with GaN barriers. Even though the band-offset and hence the carrier confinement for the InAlGaN barriers is smaller than in the case of AlGaN barriers, strain compensated In0.03Al0.16Ga0.79N barrier layers seem to be greatly beneficial for the external quantum efficiency of the near UV LEDs. The effect of an n-type Al0.23Ga0.77N hole-blocking-layer, which was inserted below the MQW stack to prevent hole carrier leakage from UV LED active region, on the light output was also investigated. By incorporating strain compensated In0.03Al0.16Ga0.79N barriers and an Al0.23Ga0.77N hole blocking layer we were able to realize 375 nm LEDs with an output of 1 mW (measured on-wafer) at 100 mA. Finally, the wavelength dependence of the light output from UV LEDs with InGaN MQWs emitting between 375 nm and 381 nm with peak output power of 4 mW at 200 mA for the longer wavelength devices is shown.
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