{"title":"采用0.35μm SiGe BiCMOS技术的2.5 GHz低相位噪声LC压控振荡器","authors":"B. Han, Jianhui Wu, Chen Hu","doi":"10.1109/ICASIC.2007.4415689","DOIUrl":null,"url":null,"abstract":"A fully integrated low phase noise LC VCO with tail resistor for current control is presented using 0.35 mum SiGe BiCMOS technology. The structure is used to reduce noise of tail current source. The VCO has a tuning range of 480 MHz, from 2.32 GHz to 2.8 GHz and achieves low phase noise of -104.3 dBc/Hz and -124.3 dBc/Hz at 100 kHz and 1 MHz offset frequency from 2.5 GHz carrier. The oscillator draws 5 mA from 5 V supply voltage. The figure-of-merit (FOM) value at 2.5 GHz is around -178 dBc/Hz at the offset frequency of 100 kHz.","PeriodicalId":120984,"journal":{"name":"2007 7th International Conference on ASIC","volume":"148 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 2.5 GHz low phase noise LC VCO in 0.35μm SiGe BiCMOS technology\",\"authors\":\"B. Han, Jianhui Wu, Chen Hu\",\"doi\":\"10.1109/ICASIC.2007.4415689\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated low phase noise LC VCO with tail resistor for current control is presented using 0.35 mum SiGe BiCMOS technology. The structure is used to reduce noise of tail current source. The VCO has a tuning range of 480 MHz, from 2.32 GHz to 2.8 GHz and achieves low phase noise of -104.3 dBc/Hz and -124.3 dBc/Hz at 100 kHz and 1 MHz offset frequency from 2.5 GHz carrier. The oscillator draws 5 mA from 5 V supply voltage. The figure-of-merit (FOM) value at 2.5 GHz is around -178 dBc/Hz at the offset frequency of 100 kHz.\",\"PeriodicalId\":120984,\"journal\":{\"name\":\"2007 7th International Conference on ASIC\",\"volume\":\"148 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 7th International Conference on ASIC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICASIC.2007.4415689\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 7th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASIC.2007.4415689","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2.5 GHz low phase noise LC VCO in 0.35μm SiGe BiCMOS technology
A fully integrated low phase noise LC VCO with tail resistor for current control is presented using 0.35 mum SiGe BiCMOS technology. The structure is used to reduce noise of tail current source. The VCO has a tuning range of 480 MHz, from 2.32 GHz to 2.8 GHz and achieves low phase noise of -104.3 dBc/Hz and -124.3 dBc/Hz at 100 kHz and 1 MHz offset frequency from 2.5 GHz carrier. The oscillator draws 5 mA from 5 V supply voltage. The figure-of-merit (FOM) value at 2.5 GHz is around -178 dBc/Hz at the offset frequency of 100 kHz.
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