亚太赫兹源集成在低成本硅光子技术目标40 Gb/s无线链路

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI:10.1109/RFIC.2017.7969021

E. Lacombe, F. Gianesello, C. Durand, G. Ducournau, C. Luxey, D. Gloria

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引用次数: 2

摘要

随着更高数据传输/接收速率的竞争，我们可以看到以低成本CMOS技术为基础的毫米波无线系统的密集发展。为了解决5G无线网络回程链路的数据流量瓶颈，现在的目标是10gb /s以上的数据速率。为此，在亚太赫兹频率下工作的天线系统显示出巨大的潜力，利用高性能光子技术。本文提出了一种基于低成本硅光子技术集成的SiGe PIN光电二极管的亚太赫兹光源。使用激光节拍，光电二极管在125和325 GHz之间提供- 20 dBm到- 29 dBm的输出功率。利用这个宽的操作频带，可以实现超过40 Gb/s的数据速率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Sub-THz source integrated in low-cost Silicon Photonic technology targeting 40 Gb/s wireless links

Following the race for transmitting/receiving at higher data rate, we can observe intensive development of millimeter-wave wireless systems in low-cost CMOS technology. Data rates above 10 Gb/s are now targeted in order to address the data traffic bottleneck of backhaul links for the 5G wireless network. To do so, antenna-systems operating at sub-THz frequencies show great potential, leveraging high-performance photonic technology. This paper presents a sub-THz source based on a SiGe PIN photodiode integrated in low-cost Silicon Photonic technology. Using a laser beat-note, the photodiode delivers an output power ranging from −20 dBm to −29 dBm between 125 and 325 GHz. Leveraging this wide operating band, data rate exceeding 40 Gb/s can be targeted.

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2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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