用于高压和射频功率应用的SiC器件技术

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003145

Mikael Östling, Sang-Mo Koo, S. Lee, E. Danielsson, M. Domeij, C. Zetterling

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引用次数: 5

摘要

近年来，碳化硅作为一种适用于大功率、高频、高温和耐辐射器件的半导体材料受到了广泛的关注。SiC的商业化衬底和实验装置原型显示了前景，而制造技术的持续改进需要经济上可行的产品得到广泛应用。本文综述了碳化硅器件工艺技术的进展和当前存在的问题，以及用于高压和射频功率的碳化硅器件的现状。

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SiC device technology for high voltage and RF power applications

Recently, silicon carbide (SiC) has drawn considerable attention as a suitable semiconductor material for high power, high frequency, high temperature and radiation resistant devices. The commercialized substrates and the experimental device prototypes in SiC show the promises while the continued improvements in fabrication techniques are required for economically viable productions to be widespread. This paper reviews the progress and current issues in SiC device process technology and the state-of-the art SiC devices for high voltage and RF power applications.

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来源期刊

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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