添加Ti或Cu改善AlSi准分子激光平面化

Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference Pub Date : 1989-06-12 DOI:10.1109/VMIC.1989.77989

B. Woratschek, P. Carey, M. Stolz, F. Bachmann

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引用次数: 3

摘要

本文报道了用XeCl准分子激光对AlSi(1%)、AlSi(1%)Ti(0.1%)和AlSi(1%)Cu(0.5%)合金进行平面化的结果。作者发现，填充亚微米接触孔结构可获得良好的平面化效果。然而，对于AlSi合金，会发生点烧蚀，其特征是金属的去除。这与AlSiCu和AlSiTi合金的情况不同。大面积无烧蚀和点蚀的AlSiTi合金形貌最佳。这些结果表明，使用AlSiTi合金可以在较大的器件面积上实现可靠的平面化

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Improved excimer laser planarization of AlSi with addition of Ti or Cu

A report is presented on AlSi(1%), AlSi(1%)Ti(0.1%), and AlSi(1%)Cu(0.5%) alloy planarization results using a XeCl excimer laser. The authors find that excellent planarization is achieved when filling submicron contact hole structures. However, for the AlSi alloy, spot ablation occurs which is characterized by the removal of metal. This is not the case for the AlSiCu and the AlSiTi alloys. The best morphology is obtained for the AlSiTi alloy with large areas completely free of ablation and pitting. These results indicate that reliable planarization over large device areas can be achieved using the AlSiTi alloy.<>

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Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference

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