用于中紫外(MUV)光子辐射探测的宽带隙β-Ga2O3纳米机械谐振器

2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS) Pub Date : 2017-02-23 DOI:10.1109/MEMSYS.2017.7863377

Xu-Qian Zheng, Jaesung Lee, S. Rafique, Lu Han, C. Zorman, Hongping Zhao, P. Feng

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引用次数: 1

摘要

本文报道了在Si衬底的3C-SiC外延层上通过低压化学气相沉积(LPCVD)制备单晶β-Ga2O3纳米片或纳米膜制备悬浮β-Ga2O3纳米结构和纳米机械谐振器的首次演示。这些单晶β-Ga2O3鼓面纳米机械谐振器在~ 10至70MHz的频率范围内提供强大的多模谐振。在中紫外(MUV)辐射下，谐振腔的谐振频率发生位移，响应率为−3.8Hz/pW。

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Wide bandgap β-Ga2O3 nanomechanical resonators for detection of middle-ultraviolet (MUV) photon radiation

This digest paper reports on the first demonstration of suspended β-Ga2O3 nanostructures and nanomechanical resonators made from single-crystal β-Ga2O3 nanosheets or nanomembranes grown via low pressure chemical vapor deposition (LPCVD) on 3C-SiC epi-layer on Si substrate. These single-crystal β-Ga2O3 drumhead nanomechanical resonators offer robust multimode resonances at frequencies in the range of ∼10 to 70MHz. The resonators exposed to middle ultraviolet (MUV) radiation exhibit shifts in resonant frequency with a responsivity of −3.8Hz/pW.

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2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS)

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