采用基于InP的HBT技术的低相位噪声毫米波频率源

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.529008

H. Wang, K. Chang, L. Tran, J. Cowles, T. Block, D. Lo, G. Dow, A. Oki, D. Streit, B. Allen

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引用次数: 9

摘要

开发了基于InP HBT技术的毫米波源系列。这些源包括40 ghz、46 ghz、62 ghz MMIC基模vco，以及一个95 ghz频率源模块，该模块采用23.8 ghz InP HBT MMIC DRO，结合基于GaAs的HEMT MMIC四倍频器和w波段输出放大器。由于基于inp的HBT器件具有较低的1/f噪声，因此获得了良好的相位噪声性能。据我们所知，这是使用基于inp的hbt的毫米波源的首次演示。

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Low phase noise millimeter-wave frequency sources using InP based HBT technology

A family of millimeter-wave sources based on InP HBT technology has been developed. These sources include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode VCOs, and a 95-GHz frequency source module using a 23.8-GHz InP HBT MMIC DRO in conjunction with a GaAs based HEMT MMIC frequency quadrupler and W-band output amplifiers. Good phase noise performance was achieved due to the low 1/f noise of the InP-based HBT devices. To our knowledge, this is the first demonstration of millimeter-wave sources using InP-based HBTs.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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