采用自对准和自焊接多壁碳纳米管的敏感NH3OH和HCl气体传感器

M. Tabib-Azar, YanXie
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引用次数: 7

摘要

利用金属催化化学气相沉积技术,首次在18个微米高的硅柱之间生长出自对准和自焊接的多壁碳纳米管,硅柱具有2-6微米的间隙,具有优异的欧姆电接触和超过0.1 muN/CNT的机械结合强度。在室温下暴露于氨和盐酸气体时,跨越相邻硅柱间隙的5-10 MWCNTs的电导率发生了巨大变化。在本文报道的器件中,在生长过程中,MWCNTs两侧和硅柱之间的电接触紧密地形成。因此,这些自焊接MWCNT器件的气敏性受接触势垒变化的影响较小。此外,由于MWCNTs在生长过程中是自对准和自焊接的,因此唯一需要的后处理步骤是切割和电线粘合到芯片载体(封装)上,这使得这些器件本质上更可靠,更具成本效益
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sensitive NH3OH and HCl Gas Sensors Using Self-Aligned and Self-Welded Multi-Walled Carbon Nanotubes
Self-aligned and self-welded multi-walled carbon nanotubes were grown for the first time using a metal-catalyzed chemical vapor deposition technique between 18 mum-high silicon posts with 2-6 mum gaps with excellent ohmic electrical contacts and mechanical bonding strengths in excess of 0.1 muN/CNT. The electrical conductivity of 5-10 MWCNTs spanning the gap between adjacent silicon posts changed drastically upon exposure to ammonia and hydrochloric gases at room temperature. In devices reported here the electrical contact between both sides of the MWCNTs and the silicon posts are intimately formed during the growth process. Thus, the gas sensitivity of these self-welded MWCNT devices are less affected by the contact barrier changes. Moreover, since the MWCNTs are self- aligned and self-welded during the growth, the only post processing steps that are needed are dicing and wire-bonding to a chip carrier (package), making these devices inherently more reliable and cost effective
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