Namjun Cho, Seong-Jun Song, Sunyoung Kim, Shiho Kim, H. Yoo
{"title":"一个5.1-/spl mu/W的超高频RFID标签芯片,集成传感器,用于无线环境监测","authors":"Namjun Cho, Seong-Jun Song, Sunyoung Kim, Shiho Kim, H. Yoo","doi":"10.1109/ESSCIR.2005.1541614","DOIUrl":null,"url":null,"abstract":"An RF-powered transponder with temperature and photo sensors is designed and fabricated for environmental monitoring. The transponder gathers power from external ISM (860-960MHz) band RF signal and senses ambient temperature and light. It contains a supply voltage generator, a temperature-compensated ring oscillator, an oversampling synchronizer, a PTAT temperature sensor and an abrupt transition buffered photo sensor. Its internal clock frequency has variation less than 7% for 1.5-V supply voltage and 90/spl deg/C temperature change. The transponder occupies 0.4mm/sup 2/ with 0.25-/spl mu/m CMOS process and dissipates only 5.14-/spl mu/W during active state.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"380 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"184","resultStr":"{\"title\":\"A 5.1-/spl mu/W UHF RFID tag chip integrated with sensors for wireless environmental monitoring\",\"authors\":\"Namjun Cho, Seong-Jun Song, Sunyoung Kim, Shiho Kim, H. Yoo\",\"doi\":\"10.1109/ESSCIR.2005.1541614\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An RF-powered transponder with temperature and photo sensors is designed and fabricated for environmental monitoring. The transponder gathers power from external ISM (860-960MHz) band RF signal and senses ambient temperature and light. It contains a supply voltage generator, a temperature-compensated ring oscillator, an oversampling synchronizer, a PTAT temperature sensor and an abrupt transition buffered photo sensor. Its internal clock frequency has variation less than 7% for 1.5-V supply voltage and 90/spl deg/C temperature change. The transponder occupies 0.4mm/sup 2/ with 0.25-/spl mu/m CMOS process and dissipates only 5.14-/spl mu/W during active state.\",\"PeriodicalId\":239980,\"journal\":{\"name\":\"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.\",\"volume\":\"380 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"184\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIR.2005.1541614\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2005.1541614","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 5.1-/spl mu/W UHF RFID tag chip integrated with sensors for wireless environmental monitoring
An RF-powered transponder with temperature and photo sensors is designed and fabricated for environmental monitoring. The transponder gathers power from external ISM (860-960MHz) band RF signal and senses ambient temperature and light. It contains a supply voltage generator, a temperature-compensated ring oscillator, an oversampling synchronizer, a PTAT temperature sensor and an abrupt transition buffered photo sensor. Its internal clock frequency has variation less than 7% for 1.5-V supply voltage and 90/spl deg/C temperature change. The transponder occupies 0.4mm/sup 2/ with 0.25-/spl mu/m CMOS process and dissipates only 5.14-/spl mu/W during active state.