{"title":"采用0.18µm CMOS工艺,具有可调漏损补偿的低噪声电荷敏感放大器","authors":"Xiangyu Li, Qi Zhang, Yihe Sun","doi":"10.1109/EDSSC.2010.5713693","DOIUrl":null,"url":null,"abstract":"Gate leakage of charge sensitive amplifier (CSA) in deep submicron process not only increases noise but also impacts the DC voltage of preamplifier output. This paper proposes a CSA for CdZnTe particle detector readout implemented in 0.18µm CMOS process including its new reset and leakage compensation configuration which has low noise and short reset time, especially, is adjustable to fit leakage current variation. This design is tape out verified. The test chip achieves 250e equivalent noise charge. And its reset time is adjustable indeed.","PeriodicalId":356342,"journal":{"name":"2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A low noise charge sensitive amplifier with adjustable leakage compensation in 0.18µm CMOS process\",\"authors\":\"Xiangyu Li, Qi Zhang, Yihe Sun\",\"doi\":\"10.1109/EDSSC.2010.5713693\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gate leakage of charge sensitive amplifier (CSA) in deep submicron process not only increases noise but also impacts the DC voltage of preamplifier output. This paper proposes a CSA for CdZnTe particle detector readout implemented in 0.18µm CMOS process including its new reset and leakage compensation configuration which has low noise and short reset time, especially, is adjustable to fit leakage current variation. This design is tape out verified. The test chip achieves 250e equivalent noise charge. And its reset time is adjustable indeed.\",\"PeriodicalId\":356342,\"journal\":{\"name\":\"2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2010.5713693\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2010.5713693","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low noise charge sensitive amplifier with adjustable leakage compensation in 0.18µm CMOS process
Gate leakage of charge sensitive amplifier (CSA) in deep submicron process not only increases noise but also impacts the DC voltage of preamplifier output. This paper proposes a CSA for CdZnTe particle detector readout implemented in 0.18µm CMOS process including its new reset and leakage compensation configuration which has low noise and short reset time, especially, is adjustable to fit leakage current variation. This design is tape out verified. The test chip achieves 250e equivalent noise charge. And its reset time is adjustable indeed.